CJD112 TR13 - Central Semiconductor
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Technical Details
| Case/Package | TO-252-3 |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 100V |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Lifecycle Status | Obsolete |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 20W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Polarity | NPN |
| Power Dissipation | 20W |
| REACH SVHC | No |
| RoHS | Non-Compliant |
| Transition Frequency | 25MHz |
Compliance
RoHS : Unconfirmed
REACH SVHC : No
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| onsemi | Production | ||
| onsemi | Production | ||
| onsemi | Production | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| Central Semiconductor | Obsolete | ||
| STMicroelectronics | Production | ||
| onsemi | Production | ||
| STMicroelectronics | Production | ||
| onsemi | Production |
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