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Vishay Semiconductors - EGF1BHE3/67A

EGF1BHE3/67A - Vishay Semiconductors

DIODE GEN PURP 100V 1A DO214BA

 Datasheets

Technical Details

Average Rectified Current 1A
Case/Package DO-214BA
Forward Current 1A
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Max Repetitive Reverse Voltage (Vrrm) 100V
Max Reverse Current 5uA
Max Reverse Voltage (DC) 100V
Max Surge Current 30A
Mount Surface Mount
Number of Pins 2
Package Quantity 1500
Packaging Tape and Reel
Peak Non-Repetitive Surge Current 30A
Radiation Hardening No
Recovery Time 50ns
Reverse Recovery Time 50ns
Reverse Voltage 100V
RoHS Compliant Yes
Series SUPERECTIFIER®

Compliance

   RoHS : Compliant
   Radiation Hardening : No

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Vishay Semiconductors EGF1BHE3/67A | Digikey

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Datasheets

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Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
ON Semiconductor / Fairchild
ES1J
Not Recommended for New Design
Diodes
S1B-13-F
Volume Production
Diodes
US1A-13-F
Volume Production
Diodes
US1J-13-F
Volume Production
Diodes
US1G-13-F
Volume Production
Diodes
US1K-13-F
Volume Production
Diodes
US1D-13-F
Volume Production
ON Semiconductor / Fairchild
S1B
Not Recommended for New Design
Diodes
US1M-13-F
Volume Production
ON Semiconductor / Fairchild
GF1D
Not Recommended for New Design

See more alternatives See less alternatives

Associate Distributors

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ComSIT Distribution GmbH
EGF1BHE367A
DE: 6,715
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