IRFS640B - Fairchild Semiconductor
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Technical Details
| Continuous Drain Current (ID) | 18A |
| Drain to Source Resistance | 180mΩ |
| Drain to Source Voltage (Vdss) | 200V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Introduction Date | 2001-03-23 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 43W |
| Min Breakdown Voltage | 200V |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| REACH SVHC | Yes |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Unknown | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Vishay | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Advanced Power Technology | Unknown | ||
| STMicroelectronics | Obsolete |
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