SFW9610TM - Fairchild Semiconductor
Power Field-Effect Transistor, 1.75A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,...
Technical Details
| Case/Package | TO-263 |
| Continuous Drain Current (ID) | 1.75A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 3Ω |
| Element Configuration | Single |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 20W |
| Min Breakdown Voltage | 200V |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| REACH SVHC | No |
| Resistance | 3Ω |
| Rise Time | 20ns |
| RoHS | Compliant |
| Turn-Off Delay Time | 27ns |
Compliance
RoHS : Unconfirmed
REACH SVHC : No
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Fairchild Semiconductor | Obsolete | ||
| Fairchild Semiconductor | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Production | ||
| Vishay | Obsolete | ||
| Infineon | Production | ||
| Vishay | Production | ||
| Vishay | Production | ||
| Vishay | Production | ||
| Vishay | Production |
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