2SK897-MR - Fuji
Power Field-Effect Transistor, 4A I(D), 550V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
Technical Details
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 1.5Ω |
| Lifecycle Status | Obsolete |
| Max Power Dissipation | 40W |
| Min Breakdown Voltage | 550V |
| Number of Elements | 1 |
| Number of Terminals | 3 |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| STMicroelectronics | Production | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Obsolete |
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