IPB80P04P4-05 - Infineon

IPB80P04P405ATMA1 P-Channel MOSFET, 80 A, 40 V OptiMOS P, 3-Pin D2PAK Infineon

Technical Details

Case/Package TO-263-3
China RoHS Non-Compliant
Continuous Drain Current (ID) 80A
Drain to Source Breakdown Voltage -40V
Drain to Source Resistance 5.2mΩ
Drain to Source Voltage (Vdss) -40V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 65ns
Gate to Source Voltage (Vgs) 20V
Halogen Free Halogen Free
Height 4.4mm
Input Capacitance 7.9nF
Introduction Date 2011-04-18
Length 10mm
Lifecycle Status Production
Max Dual Supply Voltage -40V
Max Operating Temperature 175°C
Max Power Dissipation 125W
Min Breakdown Voltage 40V
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 2
Power Dissipation 125W
Rds On Max 4.9mΩ
REACH SVHC No
Rise Time 24ns
RoHS Compliant
Turn-Off Delay Time 73ns
Turn-On Delay Time 42ns
Width 9.25mm

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

Images

Infineon IPB80P04P4-05 | LCSC

LCSC

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Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
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