IPB80P04P405ATMA1 - Infineon

-40V, P-Ch, 4.9 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-P2, PG-TO263-3, RoHS

Technical Details

Case/Package TO-263-3
China RoHS Non-Compliant
Continuous Drain Current (ID) 80A
Drain to Source Resistance 4.9mΩ
Drain to Source Voltage (Vdss) -40V
Export Control Classification Number (ECCN) Code EAR99
Fall Time 65ns
Gate to Source Voltage (Vgs) 20V
Halogen Free Halogen Free
Input Capacitance 10.3nF
Introduction Date 2011-04-18
Lead Free Contains Lead
Lifecycle Status Obsolete
Max Dual Supply Voltage -40V
Max Operating Temperature 175°C
Max Power Dissipation 125W
Min Breakdown Voltage 40V
Min Operating Temperature -55°C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Number of Terminals 2
On-State Resistance 4.9mΩ
Package Quantity 1000
Packaging Tape & Reel
Power Dissipation 125W
Rds On Max 4.9mΩ
REACH SVHC No
Rise Time 24ns
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Turn-Off Delay Time 73ns
Turn-On Delay Time 42ns

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

Images

Infineon IPB80P04P405ATMA1 | Farnell

Farnell

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Infineon Production
Infineon Production

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