IPI05CN10N G - Infineon

MOSFET N-CH 100V 100A TO262-3 N-Channel 100 V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3

Technical Details

Case/Package TO-262
Continuous Drain Current (ID) 100A
Drain to Source Breakdown Voltage 100V
Drain to Source Resistance 5.4mΩ
Drain to Source Voltage (Vdss) 100V
Element Configuration Single
Fall Time 21ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 12nF
Max Operating Temperature 175°C
Max Power Dissipation 300W
Min Operating Temperature -55°C
Mount Through Hole
Nominal Vgs 3V
Number of Pins 3
Power Dissipation 300W
Rds On Max 5.4mΩ
Rise Time 42ns
RoHS Compliant
Turn-Off Delay Time 64ns

Compliance

   RoHS : Unconfirmed

Images

Lifecycle Status Indicator

   Unknown

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