IPI12CNE8N G - Infineon

Mosfet N-ch 85V 67A TO262-3

Technical Details

Case/Package TO-262-3
China RoHS Compliant
Continuous Drain Current (ID) 67A
Drain to Source Breakdown Voltage 85V
Drain to Source Resistance 12.6mΩ
Drain to Source Voltage (Vdss) 85V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 8ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 4.34nF
Introduction Date 2006-02-17
Lifecycle Status Obsolete
Max Operating Temperature 175°C
Max Power Dissipation 125W
Min Breakdown Voltage 85V
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Terminals 3
Power Dissipation 125W
Rds On Max 12.6mΩ
REACH SVHC Yes
Rise Time 21ns
RoHS Compliant
Turn-Off Delay Time 32ns

Compliance

   RoHS : Unconfirmed
   REACH SVHC : Yes

Images

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Fairchild Semiconductor Obsolete
STMicroelectronics Obsolete
Fairchild Semiconductor Obsolete
Fairchild Semiconductor Obsolete
Infineon Obsolete
onsemi Obsolete
Renesas Obsolete
onsemi Obsolete
Infineon Obsolete
Renesas Obsolete

See more alternatives See less alternatives

Non-Authorized Distributors

Distributor SKU Stock USD 1 10 50 100 1000 10000 Buy
Component Stockers USA
US: 492
$ 99.99 99.99 99.99 99.99 99.99 99.99
 Historical Pricing  Historical Stock Levels
Quantity
Location
Microchip USA
US: 345
$
 Historical Pricing  Historical Stock Levels
Quantity
Location
XingHuan International
CN: 3000
$
 Historical Pricing  Historical Stock Levels
Quantity
Location
Suntronic
CN: 5170
$
 Historical Pricing  Historical Stock Levels
Quantity
Location

Registered user only