IPI90R800C3XKSA1 - Infineon

MOSFET N-CH 900V 6.9A TO262-3 N-Channel 900 V 6.9A (Tc) 104W (Tc) Through Hole PG-TO262-3

Technical Details

Case/Package TO-262-3
China RoHS Compliant
Contact Plating Tin
Continuous Drain Current (ID) 6.9A
Drain to Source Resistance 800mΩ
Drain to Source Voltage (Vdss) 900V
Export Control Classification Number (ECCN) Code EAR99
Fall Time 32ns
Gate to Source Voltage (Vgs) 20V
Halogen Free Halogen Free
Input Capacitance 1.1nF
Introduction Date 2008-07-30
Lead Free Lead Free
Lifecycle Status Obsolete
Max Dual Supply Voltage 900V
Max Operating Temperature 175°C
Max Power Dissipation 104W
Min Breakdown Voltage 900V
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
On-State Resistance 800mΩ
Package Quantity 500
Power Dissipation 104W
Rds On Max 800mΩ
REACH SVHC Yes
Rise Time 20ns
RoHS Compliant
Turn-Off Delay Time 400ns
Turn-On Delay Time 70ns

Compliance

   RoHS : Unconfirmed
   REACH SVHC : Yes

Images

Infineon IPI90R800C3XKSA1 | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Infineon Obsolete
Infineon Obsolete
Infineon Obsolete

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