IRF8707GTRPBF - Infineon
N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity: N Channel; Contin
Technical Details
| Case/Package | SOIC |
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 14.2mΩ |
| Drain to Source Voltage (Vdss) | 30V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 4.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.75mm |
| Input Capacitance | 760pF |
| Introduction Date | 2009-07-10 |
| Length | 4.9784mm |
| Lifecycle Status | Production |
| Max Junction Temperature (Tj) | 150°C |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2.5W |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 8 |
| On-State Resistance | 11.9mΩ |
| Package Quantity | 4000 |
| Packaging | Tape & Reel |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 11.9mΩ |
| REACH SVHC | No |
| Rise Time | 7.9ns |
| RoHS | Compliant |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 7.3ns |
| Turn-On Delay Time | 6.7ns |
| Width | 3.9878mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
Images
Farnell
Authorized Distributors
| Distributor | SKU | Stock | USD | 1 | 10 | 50 | 100 | 1000 | 10000 | Buy |
|---|---|---|---|---|---|---|---|---|---|---|
| Farnell |
GB: 0
|
$ | 0.5498 | 0.5498 | 0.4151 | 0.2599 | 0.2545 | |||
| Farnell |
GB: 0
|
$ | 0.2599 | 0.2545 | ||||||
Non-Authorized Distributors
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