IRFU5305PBF - Infineon
Mosfet, Power; P-ch; Vdss -55V; Rds(on) 0.065 Ohm; Id -31A; I-pak (TO-251AA); Pd 110W
Technical Details
| Case/Package | TO-251-3 |
| China RoHS | Non-Compliant |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 31A |
| Current Rating | -28A |
| Drain to Source Breakdown Voltage | -55V |
| Drain to Source Resistance | 65mΩ |
| Drain to Source Voltage (Vdss) | -55V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 63ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.17mm |
| Input Capacitance | 1.2nF |
| Introduction Date | 1996-07-01 |
| Lead Free | Contains Lead, Lead Free |
| Lead Length | 9.65mm |
| Lead Pitch | 2.28mm |
| Length | 6.6mm |
| Lifecycle Status | Production |
| Max Junction Temperature (Tj) | 175°C |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 69W |
| Min Breakdown Voltage | 55V |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| On-State Resistance | 65mΩ |
| Package Quantity | 3000 |
| Packaging | Bulk |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 65mΩ |
| REACH SVHC | No |
| Resistance | 65mΩ |
| Rise Time | 66ns |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85 |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 14ns |
| Voltage Rating (DC) | -55V |
| Width | 2.3mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
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