JANTXV2N6770 - International Rectifier
100V Thru 500V, Up to 38A, N-channel, Enhancement Mode Mosfet Power Transistor 2TO-204
Technical Details
| Body Material | Metal |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 500mΩ |
| Drain to Source Voltage (Vdss) | 500V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 7.74mm |
| Lifecycle Status | Production |
| Max Junction Temperature (Tj) | 150°C |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 150W |
| Min Breakdown Voltage | 500V |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| On-State Resistance | 400mΩ |
| Power Dissipation | 150W |
| REACH SVHC | Yes |
| RoHS | Non-Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 170ns |
| Turn-On Delay Time | 35ns |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
Images
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.
Registered user only