Discrete Semiconductors > Transistors > MOSFETs

IPB65R380C6ATMA1 - Infineon

MOSFET N-CH 650V 10.6A D2PAK N-Channel 650 V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO263-3

Case/Package	TO-263-3
Contact Plating	Tin
Continuous Drain Current (ID)	10.6A
Drain to Source Resistance	380mΩ
Drain to Source Voltage (Vdss)	650V
Export Control Classification Number (ECCN) Code	EAR99
Fall Time	11ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Input Capacitance	710pF
Introduction Date	2010-10-28
Lead Free	Contains Lead
Lifecycle Status	Obsolete
Max Dual Supply Voltage	650V
Max Operating Temperature	150°C
Max Power Dissipation	83W
Min Breakdown Voltage	650V
Min Operating Temperature	-55°C
Mount	Surface Mount
Number of Elements	1
Number of Terminals	2
On-State Resistance	380mΩ
Package Quantity	1000
Packaging	Tape & Reel
Power Dissipation	83W
Radiation Hardening	No
Rds On Max	380mΩ
REACH SVHC	No
Rise Time	12ns
RoHS	Compliant
Turn-On Delay Time	12ns

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : No

Infineon IPB65R380C6ATMA1 | Rochester Electronics

Rochester Electronics

Obsolete

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