NDD60N360U1-1G - onsemi

Tube Through Hole N-Channel Single Mosfet Transistor 11A Tc 11A 114W 22ns

Technical Details

Case/Package TO-251
Continuous Drain Current (ID) 11A
Country of Origin Malaysia
Drain to Source Resistance 360mΩ
Drain to Source Voltage (Vdss) 600V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 22ns
Gate to Source Voltage (Vgs) 25V
Halogen Free Halogen Free
Input Capacitance 790pF
Introduction Date 2012-10-10
Lead Free Lead Free
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Operating Temperature 150°C
Max Power Dissipation 114W
Min Breakdown Voltage 600V
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 4
Number of Terminals 3
Power Dissipation 114W
Radiation Hardening No
Rds On Max 360mΩ
REACH SVHC No
Rise Time 20ns
RoHS Compliant
Turn-Off Delay Time 26ns
Turn-On Delay Time 10ns

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

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onsemi NDD60N360U1-1G | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   Obsolete
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Alternatives (Possible Substitutes)

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