Discrete Semiconductors > Transistors > MOSFETs

IRF5210SPBF - Infineon

MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 60 Milliohms; ID -38A; D2Pak; PD 170W; -55degc

Case/Package	D2PAK
Continuous Drain Current (ID)	38A
Drain to Source Breakdown Voltage	-100V
Drain to Source Resistance	60mΩ
Drain to Source Voltage (Vdss)	-100V
Dual Supply Voltage	100V
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Fall Time	55ns
Gate to Source Voltage (Vgs)	20V
Height	4.83mm
Input Capacitance	2.78nF
Introduction Date	1996-08-14
Lead Free	Lead Free
Length	10.668mm
Lifecycle Status	Obsolete
Max Junction Temperature (Tj)	150°C
Max Operating Temperature	150°C
Max Power Dissipation	170W
Min Breakdown Voltage	100V
Min Operating Temperature	-55°C
Mount	Surface Mount
Nominal Vgs	-4V
Number of Channels	1
Number of Elements	1
Number of Pins	3
Number of Terminals	2
On-State Resistance	60mΩ
Package Quantity	1000
Power Dissipation	3.1W
Radiation Hardening	No
Rds On Max	60mΩ
REACH SVHC	No
Recovery Time	260ns
Resistance	60MΩ
Rise Time	63ns
RoHS	Compliant
Schedule B	8541290080
Threshold Voltage	-4V
Turn-Off Delay Time	72ns
Turn-On Delay Time	14ns
Width	9.65mm

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : No

Obsolete

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator
Infineon	IRF5210STRLPBF	Production
Infineon	AUIRF5210STRL	Obsolete
Infineon	AUIRF5210S	Obsolete
Infineon	IRF5210STRRPBF	Obsolete
International Rectifier	IRF5210STRLHR	Obsolete
Littelfuse	IXTA52P10P	Production
Infineon	IRF5210PBF	Production
Infineon	IRF5210LPBF	Obsolete
Fairchild Semiconductor	FQB9P25	Obsolete
Fairchild Semiconductor	SFW9640	Obsolete