IRF5210LPBF - Infineon

Mosfet, Power; P-ch; Vdss -100V; Rds(on) 0.06 Ohm; Id -40A; TO-262; Pd 200W; Vgs +/-20V

Technical Details

Case/Package TO-262
China RoHS Non-Compliant
Continuous Drain Current (ID) 38A
Current Rating -40A
Drain to Source Breakdown Voltage -100V
Drain to Source Resistance 60mΩ
Drain to Source Voltage (Vdss) -100V
Dual Supply Voltage 100V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 55ns
Gate to Source Voltage (Vgs) 20V
Height 15.1mm
Input Capacitance 2.7nF
Introduction Date 1996-06-01
Lead Free Contains Lead
Length 10.54mm
Lifecycle Status Obsolete
Max Junction Temperature (Tj) 150°C
Max Operating Temperature 150°C
Max Power Dissipation 170W
Min Breakdown Voltage 100V
Min Operating Temperature -55°C
Mount Through Hole
Nominal Vgs 4V
Number of Channels 1
Number of Elements 1
Number of Pins 3
Number of Terminals 3
On-State Resistance 60mΩ
Package Quantity 1000
Packaging Bulk
Power Dissipation 3.1W
Radiation Hardening No
Rds On Max 60mΩ
REACH SVHC No
Resistance 60mΩ
Rise Time 63ns
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Termination SMD/SMT
Threshold Voltage 4V
Turn-Off Delay Time 72ns
Turn-On Delay Time 14ns
Voltage Rating (DC) -100V
Width 4.69mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

Infineon IRF5210LPBF | RS

RS

Lifecycle Status Indicator

   Obsolete
Symbol
Footprint

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
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