MJD3055T4 - STMicroelectronics
Bipolar (BJT) Single Transistor, NPN, 60 V, 10 A, 20 W, TO-252 (DPAK), Surface Mount
Technical Details
| Case/Package | TO-252 |
| China RoHS | Non-Compliant |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 8V |
| Collector Emitter Voltage (VCEO) | 60V |
| Country of Origin | Mainland China |
| Current Rating | 10A |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 2MHz |
| Gain Bandwidth Product | 2MHz |
| Height | 2.4mm |
| hFE Min | 5 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Introduction Date | 1980-01-04 |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Lifecycle Status | Production |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 10A |
| Max Frequency | 2MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 20W |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Polarity | NPN |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| REACH SVHC | No |
| RoHS | Compliant |
| Schedule B | 8541290080 |
| Transition Frequency | 2MHz |
| Voltage Rating (DC) | 60V |
| Width | 6.2mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
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