Discrete Semiconductors > Transistors > BJTs

MJW3281AG - ON Semiconductor

Bipolar Power Transistor, NPN, 15 A, 230 V, 200 Watt

Technical Details

Case/Package	TO-247-3
Collector Base Voltage (VCBO)	230V
Collector Emitter Breakdown Voltage	230V
Collector Emitter Saturation Voltage	400mV
Collector-emitter Voltage-Max	2V
Current Rating	15A
Emitter Base Voltage (VEBO)	5V
Gain Bandwidth Product	30MHz
hFE Min	50
Lead Free	Lead Free
Max Collector Current	15A
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	200W
Number of Pins	3
Package Quantity	30
Packaging	Rail/Tube
Polarity	NPN
Radiation Hardening	No
RoHS Compliant	Yes
Transition Frequency	30MHz
Voltage Rating (DC)	230V

Compliance

RoHS : Compliant

Radiation Hardening : No

Images

ON Semiconductor MJW3281AG | Rochester Electronics

Rochester Electronics

ON Semiconductor MJW3281AG | Newark

Newark

ON Semiconductor MJW3281AG | Element14

Element14

ON Semiconductor MJW3281AG | Rs

Rs

ON Semiconductor MJW3281AG | Future Electronics

Future Electronics

Datasheets

Avnet

MJW3281AG datasheet (pdf, 154.9 KB)

Lifecycle Status Indicator

Volume Production

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Symbol

MJW3281AG Symbol - ON Semiconductor

Footprint

MJW3281AG Footprint - ON Semiconductor

Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
Toshiba	2SC5359-O(Q)	Volume Production

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Onlinecomponents.com

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2.50

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Master Electronics

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2.50

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1.94

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2.08

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2.04

1.96

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2.90

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1.86

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Verical

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3.25

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2.522

2.366

Newark

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5.57

4.96

4.37

3.77

3.35

3.35

Flip Electronics

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Future Electronics

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1.84

1.81

1.75

1.75

Avnet

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1.7793

1.672

Arrow Electronics

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2.266

2.266

1.895

1.794

Element14

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5.3726

2.7242

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2.3296

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1.3316

1.3316

Lucentia Tech

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Fmall Co. Limited

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Corohmni

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Tactical IC USA

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3.475

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3.301

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NAC Semi

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Eastek

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