MMBT2222A-7 - Diodes

Trans Gp Bjt NPN 40V 0.6A 3-PIN SOT-23 T/r

Technical Details

Case/Package TO-236-3
Collector Base Voltage (VCBO) 75V
Collector Emitter Breakdown Voltage 40V
Collector-emitter Voltage-Max 1V
Continuous Collector Current 600mA
Current Rating 600mA
DC Current Gain-Min (hFE) 40
Emitter Base Voltage (VEBO) 6V
Gain Bandwidth Product 300MHz
Height 1mm
hFE Min 100
JESD-30 Code R-PDSO-G3
Lead Free Contains Lead
Length 3.05mm
Max Breakdown Voltage 40V
Max Collector Current 600mA
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 300mW
Moisture Sensitivity Level 1
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Package Body Material Plastic
Package Quantity 1
Package Shape Rectangular
Packaging Tape and Reel
Peak Reflow Temperature (Cel) 245°C
Polarity NPN
Radiation Hardening No
Reach SVHC Compliant No
RoHS Compliant No
Surface Mount Yes
Terminal Form Gull Wing
Terminal Position DUAL
Time @ Peak Reflow Temperature-Max (s) 5s
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency 300MHz
Voltage Rating (DC) 40V
Weight 0.00709oz
Width 1.4mm

Compliance

   RoHS : Not Compliant
   Radiation Hardening : No

Lifecycle Status Indicator

   End of Life

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
NXP Semiconductors Volume Production
NXP Semiconductors Volume Production
NTE Electronics Volume Production
MCC Volume Production
Diodes Volume Production
Infineon Volume Production
Central Semiconductor Volume Production
ON Semiconductor Volume Production
Infineon Volume Production
ON Semiconductor / Fairchild Obsolete

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