Technical Details
Case/Package | TO-236-3 |
Collector Base Voltage (VCBO) | 75V |
Collector Emitter Breakdown Voltage | 40V |
Collector-emitter Voltage-Max | 1V |
Continuous Collector Current | 600mA |
Current Rating | 600mA |
DC Current Gain-Min (hFE) | 40 |
Emitter Base Voltage (VEBO) | 6V |
Gain Bandwidth Product | 300MHz |
Height | 1mm |
hFE Min | 100 |
JESD-30 Code | R-PDSO-G3 |
Lead Free | Contains Lead |
Length | 3.05mm |
Max Breakdown Voltage | 40V |
Max Collector Current | 600mA |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Max Power Dissipation | 300mW |
Moisture Sensitivity Level | 1 |
Mount | Surface Mount |
Number of Elements | 1 |
Number of Pins | 3 |
Package Body Material | Plastic |
Package Quantity | 1 |
Package Shape | Rectangular |
Packaging | Tape and Reel |
Peak Reflow Temperature (Cel) | 245°C |
Polarity | NPN |
Radiation Hardening | No |
Reach SVHC Compliant | No |
RoHS Compliant | No |
Surface Mount | Yes |
Terminal Form | Gull Wing |
Terminal Position | DUAL |
Time @ Peak Reflow Temperature-Max (s) | 5s |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transition Frequency | 300MHz |
Voltage Rating (DC) | 40V |
Weight | 0.00709oz |
Width | 1.4mm |
Compliance
RoHS : Not Compliant
Radiation Hardening : No
Alternatives (Possible Substitutes)
Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
---|---|---|---|
NXP Semiconductors | Volume Production | ||
NXP Semiconductors | Volume Production | ||
NTE Electronics | Volume Production | ||
MCC | Volume Production | ||
Diodes | Volume Production | ||
Infineon | Volume Production | ||
Central Semiconductor | Volume Production | ||
ON Semiconductor | Volume Production | ||
Infineon | Volume Production | ||
ON Semiconductor / Fairchild | Obsolete |
Associate Distributors
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