MMBT2907A_D87Z - ON Semiconductor / Fairchild
Bipolar Transistors - BJT PNP Transistor General Purpose
Technical Details
Case/Package | SOT-23-3 |
Collector Base Voltage (VCBO) | -60V |
Collector Emitter Breakdown Voltage | 60V |
Collector Emitter Saturation Voltage | 1.6V |
Collector Emitter Voltage (VCEO) | 60V |
Collector-emitter Voltage-Max | 1.6V |
Emitter Base Voltage (VEBO) | -5V |
Frequency | 200MHz |
Gain Bandwidth Product | 200MHz |
hFE Min | 100 |
Max Breakdown Voltage | 60V |
Max Collector Current | 800mA |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Max Power Dissipation | 350mW |
Mount | Surface Mount |
Number of Elements | 1 |
Number of Pins | 3 |
Package Quantity | 1 |
Packaging | Tape and Reel |
Polarity | PNP |
Power Dissipation | 350mW |
Radiation Hardening | No |
RoHS Compliant | Yes |
Transition Frequency | 200MHz |
Weight | 0.03g |
Compliance
RoHS : Compliant
Radiation Hardening : No
Images
Mouser
Digikey
Alternatives (Possible Substitutes)
Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
---|---|---|---|
ON Semiconductor | Volume Production | ||
ON Semiconductor / Fairchild | Obsolete | ||
ON Semiconductor / Fairchild | Volume Production | ||
Infineon | Volume Production | ||
Infineon | Volume Production | ||
ON Semiconductor | Volume Production | ||
MCC | Volume Production | ||
Infineon | Volume Production | ||
Infineon | Not Recommended for New Design | ||
NXP Semiconductors | Volume Production |
Notice
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