MRF6V12500HSR3 - NXP Semiconductors

Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V

Technical Details

Body Material Ceramic
Drain to Source Breakdown Voltage 110V
Drain to Source Voltage (Vdss) 110V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Frequency 1.03GHz
Gain 19.7dB
Gate to Source Voltage (Vgs) 10V
Halogen Free Halogen Free
Harmonized Tariff Schedule (HTS) Code 8541.29.00.75
Introduction Date 2009-09-14
Lifecycle Status Obsolete
Max Frequency 1.215GHz
Max Operating Temperature 225°C
Min Breakdown Voltage 110V
Min Operating Temperature -65°C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Number of Terminals 2
Output Power 500W
Packaging Tape & Reel
REACH SVHC Yes
RoHS Compliant
Test Current 200mA
Test Voltage 50V
Voltage Rating 110V
Weight 4.763003g

Compliance

   RoHS : Unconfirmed
   REACH SVHC : Yes

Images

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
NXP Semiconductors EOL
Ampleon Unknown
Infineon Unknown
NXP Semiconductors Obsolete
NXP Semiconductors Obsolete
NXP Semiconductors Obsolete
Freescale Semiconductor Obsolete
NXP Semiconductors Unknown
NXP Semiconductors Obsolete
NXP Semiconductors Obsolete

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