MRF6V12500HSR5 - NXP Semiconductors

RF Power Transistor, 960 to 1215 MHz, 500 W, Typ Gain in dB is 19.7 @ 1030 MHz, 50 V, LDMOS, SOT1793

Technical Details

Body Material Ceramic
Country of Origin Malaysia
Drain to Source Breakdown Voltage 110V
Drain to Source Voltage (Vdss) 110V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Frequency 1.03GHz
Gain 19.7dB
Gate to Source Voltage (Vgs) 10V
Halogen Free Halogen Free
Harmonized Tariff Schedule (HTS) Code 8541.29.00
Introduction Date 2009-09-14
Lifecycle Status EOL
Max Frequency 1.215GHz
Max Operating Temperature 225°C
Min Breakdown Voltage 110V
Min Operating Temperature -65°C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Number of Terminals 2
Output Power 500W
REACH SVHC Yes
RoHS Compliant
Test Current 200mA
Test Voltage 50V
Voltage Rating 110V
Weight 4.763003g

Compliance

   RoHS : Unconfirmed
   REACH SVHC : Yes

Images

NXP Semiconductors MRF6V12500HSR5 | RFMW

RFMW

Lifecycle Status Indicator

   EOL

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
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STMicroelectronics Obsolete
NXP Semiconductors Obsolete
NXP Semiconductors Obsolete
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