PDTA123JM,315 - Nexperia
50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
Technical Details
| Case/Package | DFN |
| China RoHS | Compliant |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Contact Plating | Tin |
| Country of Origin | Mainland China |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| hFE Min | 100 |
| Introduction Date | 2004-08-03 |
| Lead Free | Lead Free |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | RELEASED FOR SUPPLY |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 250mW |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Packaging | Tape & Reel (TR) |
| Polarity | PNP |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Schedule B | 8541210080 |
| Transition Frequency | 180MHz |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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