NTE3123 - NTE Electronics

Phototransistor Detector NPN Silicon Darlington 35V ID=10UA | Nte Electronics Inc. NTE3123

Technical Details

Collector Emitter Breakdown Voltage 35V
Dark Current 1µA
Introduction Date 1996-03-14
Lifecycle Status Obsolete
Max Collector Current 50mA
Max Operating Temperature 85°C
Max Power Dissipation 75mW
Min Operating Temperature -25°C
Mount Through Hole
Number of Circuits 1
Number of Pins 2
Peak Wavelength 860nm
Shape Round
Viewing Angle 40°

Compliance

   RoHS : Unconfirmed

Images

NTE Electronics NTE3123 | TME

TME

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

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