BD139 - NXP Semiconductors
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Technical Details
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| hFE Min | 25 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.75 |
| Introduction Date | 1990-04-11 |
| Lifecycle Status | Obsolete |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 8W |
| Min Operating Temperature | -65°C |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Power Dissipation | 8W |
| RoHS | Non-Compliant |
| Transition Frequency | 190MHz |
Compliance
RoHS : Unconfirmed
Images
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