BUK9535-55 - NXP Semiconductors
Power Field-Effect Transistor, 34A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Technical Details
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 34A |
| Drain to Source Resistance | 35mΩ |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Introduction Date | 1997-05-30 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 85W |
| Min Breakdown Voltage | 55V |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Power Dissipation | 85W |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Unknown | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Vishay | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Advanced Power Technology | Unknown | ||
| Fairchild Semiconductor | Obsolete |
Non-Authorized Distributors
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.
Registered user only