PBSS4350Z/DG,135 - NXP Semiconductors
Small Signal Bipolar Transistor, 3A I(C), 1-Element, NPN
Technical Details
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Voltage (VCEO) | 50V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| hFE Min | 100 |
| Introduction Date | 2009-10-23 |
| Lifecycle Status | Obsolete |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2W |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Packaging | Tape & Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Transition Frequency | 100MHz |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Infineon | Obsolete | ||
| onsemi | Obsolete | ||
| Central Semiconductor | Obsolete | ||
| Diodes Inc. | Production | ||
| onsemi | Production | ||
| Central Semiconductor | Obsolete | ||
| Diodes Inc. | Production | ||
| onsemi | Production | ||
| STMicroelectronics | Obsolete | ||
| onsemi | Production |
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