PDTB123TS,126 - NXP Semiconductors
Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, PNP, Silicon
Technical Details
| Case/Package | TO-226-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 300mV |
| Export Control Classification Number (ECCN) Code | EAR99 |
| hFE Min | 100 |
| Introduction Date | 2009-06-19 |
| Lifecycle Status | Obsolete |
| Max Collector Current | 500mA |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Tape & Box (TB) |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete |
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