PDTC143EEF,115 - NXP Semiconductors
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Technical Details
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Contact Plating | Tin |
| Export Control Classification Number (ECCN) Code | EAR99 |
| hFE Min | 30 |
| Introduction Date | 2004-08-06 |
| Lifecycle Status | Obsolete |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Packaging | Cut Tape (CT) |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
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