PHP193NQ06T - NXP Semiconductors
Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Technical Details
| Case/Package | TO-220AB |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Resistance | 4mΩ |
| Drain to Source Voltage (Vdss) | 55V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Input Capacitance | 5.08nF |
| Introduction Date | 2004-05-06 |
| Lead Free | Lead Free |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 300W |
| Min Breakdown Voltage | 55V |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| RoHS | Compliant |
| Voltage Rating (DC) | 55V |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Unknown | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Vishay | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Advanced Power Technology | Unknown | ||
| Fairchild Semiconductor | Obsolete |
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