Uncategorized
PMBFJ175 - NXP Semiconductors
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET
Technical Details
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 70mA |
| Drain to Source Resistance | 125Ω |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 30V |
| Introduction Date | 1989-08-22 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 300mW |
| Min Breakdown Voltage | 30V |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| NXP Semiconductors | Obsolete | ||
| Vishay | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Solitron Devices | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Calogic | Production | ||
| Texas Instruments | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Motorola | Obsolete |
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