Uncategorized
PMBFJ175T/R - NXP Semiconductors
Small Signal Field-Effect Transistor, P-Channel, Junction FET
Technical Details
| China RoHS | Compliant |
| Contact Plating | Tin |
| Drain to Source Resistance | 125Ω |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Introduction Date | 1993-03-01 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 300mW |
| Min Breakdown Voltage | 30V |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Vishay | Obsolete | ||
| Solitron Devices | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Calogic | Production | ||
| Texas Instruments | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Motorola | Obsolete |
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.
Registered user only