PSMN00555P - NXP Semiconductors
Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Technical Details
| Case/Package | TO-220AB |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 6.7mΩ |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 253ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 6.5nF |
| Introduction Date | 1999-04-16 |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 230W |
| Min Breakdown Voltage | 55V |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Power Dissipation | 230W |
| Rise Time | 180ns |
| RoHS | Compliant |
| Turn-Off Delay Time | 420ns |
| Voltage Rating (DC) | 55V |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Vishay | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Advanced Power Technology | Unknown | ||
| Fairchild Semiconductor | Obsolete | ||
| STMicroelectronics | Obsolete |
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.
Registered user only