1HP04CH-TL-W - onsemi

P-Channel Small Signal MOSFET, -100V, -170mA, 18Ω

Technical Details

Case/Package TO-236-3
Contact Plating Tin Bismuth
Continuous Drain Current (ID) 170mA
Country of Origin Mainland China
Drain to Source Breakdown Voltage -100V
Drain to Source Resistance 18Ω
Drain to Source Voltage (Vdss) -100V
Export Control Classification Number (ECCN) Code EAR99
Fall Time 81ns
Gate to Source Voltage (Vgs) 20V
Height 1.05mm
Input Capacitance 14pF
Introduction Date 2014-05-07
Lead Free Lead Free
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Junction Temperature (Tj) 150°C
Max Operating Temperature 150°C
Max Power Dissipation 600mW
Min Breakdown Voltage 100V
Min Operating Temperature -55°C
Mount Surface Mount
Number of Channels 1
Number of Elements 1
Number of Terminals 3
Packaging Digi-Reel®
Power Dissipation 600mW
Rds On Max 18Ω
REACH SVHC Yes
Rise Time 18ns
RoHS Compliant
Turn-Off Delay Time 200ns
Turn-On Delay Time 21ns

Compliance

   RoHS : Unconfirmed
   REACH SVHC : Yes

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onsemi 1HP04CH-TL-W | Rochester Electronics

Rochester Electronics

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   Production
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