2N5883G - onsemi

25 A, 60 V PNP Bipolar Power Transistor

Technical Details

Body Material Metal
Case/Package TO-204-3
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 1V
Collector Emitter Voltage (VCEO) 60V
Contact Plating Tin
Country of Origin Mexico
Current Rating 25A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Frequency 4MHz
Gain Bandwidth Product 4MHz
Height 6.35mm
hFE Min 4
Introduction Date 1999-01-01
Lead Free Lead Free
Length 31.75mm
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Collector Current 25A
Max Frequency 4MHz
Max Operating Temperature 200°C
Max Power Dissipation 200W
Min Operating Temperature -65°C
Number of Elements 1
Number of Pins 2
Number of Terminals 2
Polarity PNP
Power Dissipation 200W
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Schedule B 8541290080
Transition Frequency 4MHz
Voltage Rating (DC) -60V
Weight 4.535924g
Width 6.35mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

onsemi 2N5883G | Farnell

Farnell

Lifecycle Status Indicator

   Obsolete
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