2N6052G - onsemi

12 A, 100 V PNP Darlington Bipolar Power Transistor

Technical Details

Body Material Metal
Case/Package TO-204-3
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 100V
Collector Emitter Saturation Voltage 2V
Collector Emitter Voltage (VCEO) 100V
Contact Plating Tin
Continuous Collector Current 12A
Current Rating -12A
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Height 8.51mm
hFE Min 100
Lead Free Lead Free
Length 39.37mm
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Collector Current 12A
Max Operating Temperature 200°C
Max Power Dissipation 150W
Min Operating Temperature -65°C
Number of Elements 1
Number of Pins 2
Number of Terminals 2
Polarity PNP
Power Dissipation 150W
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Transition Frequency 4MHz
Voltage Rating (DC) -100V
Weight 4.535924g
Width 26.67mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

onsemi 2N6052G | Farnell

Farnell

Lifecycle Status Indicator

   Obsolete
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Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
onsemi Obsolete
STMicroelectronics Obsolete
Motorola Obsolete
Motorola Obsolete
STMicroelectronics Unknown
Motorola Obsolete
Motorola Obsolete
Motorola Obsolete
Motorola Obsolete
onsemi Obsolete

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