2SB1205T-E - onsemi

Small Signal Bipolar Transistor, 5A I(C), 1-Element, PNP

Technical Details

Case/Package TO-251-3
Collector Base Voltage (VCBO) -25V
Collector Emitter Breakdown Voltage 20V
Collector Emitter Saturation Voltage -250mV
Collector Emitter Voltage (VCEO) -500mV
Country of Origin Mainland China
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) -5V
Gain Bandwidth Product 320MHz
hFE Min 200
Introduction Date 2012-11-29
Lead Free Lead Free
Lifecycle Status Obsolete
Max Collector Current 5A
Max Operating Temperature 150°C
Max Power Dissipation 10W
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Packaging Bulk
Polarity PNP
REACH SVHC No
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Transition Frequency 320MHz

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

Images

onsemi 2SB1205T-E | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   Obsolete
Symbol
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Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
NTE Electronics Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi EOL
onsemi Obsolete
NTE Electronics Obsolete

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