2SB1215T-E - onsemi
Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA. ONSSPCDDENY1E7M;
Technical Details
| Case/Package | TO-251-3 |
| China RoHS | Non-Compliant |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Voltage (VCEO) | 100V |
| Contact Plating | Tin Bismuth |
| Country of Origin | Mainland China |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 200 |
| Introduction Date | 2012-05-02 |
| Lead Free | Lead Free |
| Lifecycle Status | Obsolete |
| Manufacturer Lifecycle Status | OBSOLETE |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 20W |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Packaging | Bulk |
| Polarity | PNP |
| REACH SVHC | No |
| RoHS | Compliant |
| Transition Frequency | 130MHz |
Compliance
RoHS : Unconfirmed
REACH SVHC : No
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