2SC3646T-TD-E - onsemi

Bipolar Transistor, 100V, 1A, Low VCE(sat), (PNP)NPN Single PCP hFE = 200 - 400

Technical Details

China RoHS Non-Compliant
Collector Base Voltage (VCBO) 120V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 400mV
Collector Emitter Voltage (VCEO) 100V
Country of Origin Mainland China
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 6V
Gain Bandwidth Product 120MHz
Height 1.5mm
hFE Min 200
Harmonized Tariff Schedule (HTS) Code 8541.21.00.75
Introduction Date 2011-03-18
Lead Free Lead Free
Length 4.5mm
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Breakdown Voltage 100V
Max Collector Current 1A
Max Frequency 1MHz
Max Operating Temperature 150°C
Max Power Dissipation 1.3W
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Tape and Reel
Polarity NPN
Power Dissipation 500mW
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Schedule B 8541290080|8541290080|8541290080|8541290080|8541290080
Transition Frequency 120MHz
Width 2.5mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

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onsemi 2SC3646T-TD-E | Rochester Electronics

Rochester Electronics

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   Production
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