2SK3666-3-TB-E - onsemi

N-Channel JFET, 30V, 0.6 to 6.0mA, 6.5mS, CP

Technical Details

Breakdown Voltage 30V
Case/Package SOT-23
Contact Plating Tin Bismuth
Continuous Drain Current (ID) 10mA
Country of Origin Mainland China
Drain to Source Breakdown Voltage 30V
Drain to Source Resistance 200Ω
Drain to Source Voltage (Vdss) 30V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Gate to Source Voltage (Vgs) -30V
Height 1.1mm
Input Capacitance 4pF
Introduction Date 2011-03-18
Lead Free Lead Free
Length 2.9mm
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Operating Temperature 150°C
Max Power Dissipation 200mW
Min Operating Temperature -55°C
Number of Pins 3
Packaging Tape and Reel
Power Dissipation 200mW
Radiation Hardening No
REACH SVHC Yes
RoHS Compliant
Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Termination SMD/SMT
Weight 7.994566mg
Width 1.5mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

onsemi 2SK3666-3-TB-E | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   Production
Symbol
Footprint

Alternatives (Possible Substitutes)

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NXP Semiconductors Obsolete
Central Semiconductor Unknown
onsemi Production
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