BC640 - onsemi

Bulk Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 150mA 2V 1A 625mW 100MHz

Technical Details

Case/Package TO-92
China RoHS Non-Compliant
Collector Base Voltage (VCBO) -80V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage -500mV
Collector Emitter Voltage (VCEO) 80V
Contact Plating Tin
Current 1A
Current Rating -1A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Frequency 100MHz
Gain Bandwidth Product 150MHz
hFE Min 25
Harmonized Tariff Schedule (HTS) Code 8541.21.00.95
Introduction Date 1994-01-01
Lead Free Lead Free
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Breakdown Voltage 80V
Max Collector Current 500mA
Max Operating Temperature 150°C
Max Power Dissipation 800mW
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Bulk
Polarity PNP
Power Dissipation 1W
REACH SVHC No
RoHS Compliant
Termination Through Hole
Transition Frequency 100MHz
Voltage 80V
Voltage Rating (DC) -80V
Weight 200.998119mg

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

Images

onsemi BC640 | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

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