Discrete Semiconductors > Transistors > BJTs

BC640TA - onsemi

BC640 Series 80 V 1 A 1 W PNP Epitaxial Silicon Transistor - TO-92-3

Technical Details

Case/Package	TO-92-3
China RoHS	Compliant
Collector Base Voltage (VCBO)	-100V
Collector Emitter Breakdown Voltage	-80V
Collector Emitter Saturation Voltage	-500mV
Collector Emitter Voltage (VCEO)	80V
Contact Plating	Tin
Country of Origin	Mainland China
Current	1A
Current Rating	-1A
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Emitter Base Voltage (VEBO)	-5V
Frequency	100MHz
Gain Bandwidth Product	100MHz
Height	8.77mm
hFE Min	25
Introduction Date	2000-07-19
Lead Free	Lead Free
Length	4.58mm
Lifecycle Status	Production
Manufacturer Lifecycle Status	ACTIVE
Max Breakdown Voltage	80V
Max Collector Current	1A
Max Frequency	100MHz
Max Junction Temperature (Tj)	150°C
Max Operating Temperature	150°C
Max Power Dissipation	800mW
Min Operating Temperature	-65°C
Mount	Through Hole
Number of Elements	1
Number of Pins	3
Number of Terminals	3
Polarity	PNP
Power Dissipation	1W
Radiation Hardening	No
REACH SVHC	Yes
RoHS	Compliant
Schedule B	8541210080, 8541210080\|8541210080\|8541210080\|8541210080\|8541210080
Transition Frequency	100MHz
Voltage	80V
Voltage Rating (DC)	-80V
Weight	240.007063mg
Width	3.86mm

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : Yes

Images

onsemi BC640TA | Farnell

Farnell

Datasheets

Lifecycle Status Indicator

Production

Symbol

Footprint

Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
onsemi	BC640ZL1G	Obsolete
CDIL	BC640	Unknown
NXP Semiconductors	BC640AMO	Obsolete
NXP Semiconductors	BC640	Obsolete
onsemi	BC640ZL1	Obsolete
onsemi	BC640	Obsolete
NXP Semiconductors	BC640,112	Obsolete
NXP Semiconductors	BC640,116	Obsolete
NXP Semiconductors	BC640,126	Obsolete
onsemi	BC640G	Obsolete

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