BC847BPDW1T2G - onsemi
100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor. ONSSPCTRNSTVU6M5P;
Technical Details
| Case/Package | SOT-363-6 |
| China RoHS | Compliant |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 650mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Contact Plating | Tin |
| Country of Origin | Mainland China |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Dual |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| hFE Min | 200 |
| Introduction Date | 2000-03-01 |
| Lead Free | Lead Free |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 380mW |
| Min Operating Temperature | -55°C |
| Number of Elements | 2 |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 380mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Transition Frequency | 100MHz |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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