BCW70LT1G - onsemi
Bipolar junction transistor, PNP, -100 mA, -45 V, SMD, SOT-23, BCW70LT1G
Technical Details
| Case/Package | SOT-23-3 |
| China RoHS | Compliant |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Contact Plating | Tin |
| Country of Origin | Mainland China |
| Current Rating | -100mA |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 940µm |
| hFE Min | 215 |
| Introduction Date | 1994-10-01 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 225mW |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080 |
| Voltage Rating (DC) | -45V |
| Width | 1.3mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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