FCH060N80-F155 - onsemi

N-Channel Power MOSFET, SUPERFET® II, 800 V, 58 A, 60 mΩ, TO-247

Technical Details

Case/Package TO-247-3
China RoHS Non-Compliant
Continuous Drain Current (ID) 58A
Country of Origin Mainland China
Drain to Source Breakdown Voltage 800V
Drain to Source Resistance 60mΩ
Drain to Source Voltage (Vdss) 800V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Gate to Source Voltage (Vgs) 20V
Height 24.75mm
Harmonized Tariff Schedule (HTS) Code 8541.29.00.95
Input Capacitance 14.685nF
Introduction Date 2016-04-28
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Junction Temperature (Tj) 150°C
Max Operating Temperature 150°C
Max Power Dissipation 500W
Min Breakdown Voltage 800V
Min Operating Temperature -55°C
Mount Through Hole
Number of Channels 1
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Power Dissipation 500W
Rds On Max 60mΩ
REACH SVHC No
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Threshold Voltage 4.5V
Turn-Off Delay Time 213ns
Turn-On Delay Time 55ns
Weight 6.39g

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

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onsemi FCH060N80-F155 | Rochester Electronics

Rochester Electronics

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