FDB1D7N10CL7 - onsemi
Power MOSFET, N-Channel, Standard Gate, 100 V, 268 A, 1.7 mΩ 100V PTNG NMOS
Technical Details
| Case/Package | D2PAK |
| China RoHS | Non-Compliant |
| Continuous Drain Current (ID) | 268A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 1.75mΩ |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.9mm |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Junction Temperature (Tj) | 175°C |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 250W |
| Min Breakdown Voltage | 100V |
| Min Operating Temperature | -55°C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Terminals | 6 |
| Power Dissipation | 250W |
| REACH SVHC | No |
| RoHS | Compliant |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 39ns |
Compliance
RoHS : Unconfirmed
REACH SVHC : No
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