FMBA06 - onsemi
Transistor, bjt, pair, npn, 80V V(Br)Ceo, 500Ma I(C), so Rohs Compliant: Yes |Onsemi FMBA06
Technical Details
| Case/Package | SOT-23-6 |
| China RoHS | Compliant |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Contact Plating | Tin |
| Current Rating | 500mA |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Dual |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 900µm |
| hFE Min | 100 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Introduction Date | 1998-01-01 |
| Lead Free | Lead Free |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Junction Temperature (Tj) | 150°C |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 700mW |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Polarity | NPN |
| Power Dissipation | 700mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85 |
| Transition Frequency | 100MHz |
| Voltage Rating (DC) | 80V |
| Weight | 36mg |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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