FQB22P10TM - onsemi
Transistor, P-channel, Qfet Mosfet, -100V, 22A, 125 Mohm, 175C Max, D2PAK
Technical Details
| Case/Package | D2PAK |
| China RoHS | Non-Compliant |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 22A |
| Country of Origin | Mainland China |
| Current Rating | -22A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 125mΩ |
| Drain to Source Voltage (Vdss) | -100V |
| Dual Supply Voltage | 100V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 5.08mm |
| Input Capacitance | 1.5nF |
| Introduction Date | 2000-07-18 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Junction Temperature (Tj) | 175°C |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 125W |
| Min Breakdown Voltage | 100V |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Packaging | Cut Tape |
| Power Dissipation | 3.75W |
| Radiation Hardening | No |
| Rds On Max | 125mΩ |
| REACH SVHC | No |
| Resistance | 125mΩ |
| Rise Time | 170ns |
| RoHS | Compliant |
| Schedule B | 8541290080 |
| Termination | SMD/SMT |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 17ns |
| Voltage Rating (DC) | -100V |
| Weight | 1.31247g |
| Width | 9.65mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
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