HGTG11N120CND - onsemi

Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247

Technical Details

Case/Package TO-247
China RoHS Non-Compliant
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.1V
Collector Emitter Voltage (VCEO) 1.2kV
Continuous Collector Current 43A
Current Rating 43A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 400ns
Height 24.75mm
Harmonized Tariff Schedule (HTS) Code 8541.29.00.95
Introduction Date 1999-01-01
Lead Free Lead Free
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Collector Current 43A
Max Junction Temperature (Tj) 150°C
Max Operating Temperature 150°C
Max Power Dissipation 298W
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity NPN
Power Dissipation 298W
Radiation Hardening No
REACH SVHC No
Reverse Recovery Time 70ns
Rise Time 16ns
RoHS Compliant
Turn-Off Delay Time 180ns
Turn-On Delay Time 23ns
Voltage Rating (DC) 1.2kV
Weight 6.39g

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

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onsemi HGTG11N120CND | Farnell

Farnell

Lifecycle Status Indicator

   Production
Symbol
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